Autori: Dankovic Danijel M
Naslov | Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors (Article) |
Autori | Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Stojadinovic Ninoslav D |
Info | JAPANESE JOURNAL OF APPLIED PHYSICS, (2015), vol. 54 br. 6, str. - |
Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI171026] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
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Naslov | Measurement of NBTI Degradation in p-channel Power VDMOSFETs (Article) |
Autori | Manic Ivica Dj Dankovic Danijel M Prijic Aneta P Prijic Zoran D Stojadinovic Ninoslav D |
Info | INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, (2014), vol. 44 br. 4, str. 280-287 |
Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Ei PCB Factory, Nis, Serbia |
Ispravka | Web of Science Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | The Comparison of Gamma-Radiation and Electrical Stress Influences on Oxide and Interface Defects in Power Vdmosfet (Article) |
Autori | Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Stojadinovic Ninoslav D |
Info | NUCLEAR TECHNOLOGY & RADIATION PROTECTION, (2013), vol. 28 br. 4, str. 406-414 |
Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI171026] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | An Electromechanical Approach to a Printed Circuit Board Design Course (Article) |
Autori | Dankovic Danijel M Vracar Ljubomir M Prijic Aneta P Prijic Zoran D |
Info | IEEE TRANSACTIONS ON EDUCATION, (2013), vol. 56 br. 4, str. 470-477 |
Projekat | Serbian Ministry of Education and Science [TR32026]; Ei PCB Factory, Nis, Serbia |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Effects of static and pulsed negative bias temperature stressing on lifetime in p-channel power VDMOSFETs (Article) |
Autori | Dankovic Danijel M Manic Ivica Dj Prijic Aneta P Davidovic Vojkan S Djoric-Veljkovic Snezana M Golubovic Snezana M Prijic Zoran D Stojadinovic Ninoslav D |
Info | INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, (2013), vol. 43 br. 1, str. 58-66 |
Projekat | Ministry of Education and Science of the Republic of Serbia [OI171026, TR32026]; Ei PCB Factory, Nis, Serbia |
Ispravka | Web of Science Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | A method for negative bias temperature instability (NBTI) measurements on power VDMOS transistors (Article) |
Autori | Prijic Aneta P Dankovic Danijel M Vracar Ljubomir M Manic Ivica Dj Prijic Zoran D Stojadinovic Ninoslav D |
Info | MEASUREMENT SCIENCE & TECHNOLOGY, (2012), vol. 23 br. 8, str. - |
Projekat | Serbian Ministry of Education and Science[OI171026, TR32026]; Ei PCB Factory, Nis |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions (Article) |
Autori | Manic Ivica Dj Dankovic Danijel M Prijic Aneta P Davidovic Vojkan S Djoric-Veljkovic Snezana M Golubovic Snezana M Prijic Zoran D Stojadinovic Ninoslav D |
Info | MICROELECTRONICS RELIABILITY, (2011), vol. 51 br. 9-11, str. 1540-1543 |
Projekat | Ministry of Science of the Republic of Serbia[0171026, TR32026] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Annealing of Radiation-induced Defects in Burn-in Stressed Power Vdmosfets (Article) |
Autori | Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Stojadinovic Ninoslav D |
Info | NUCLEAR TECHNOLOGY & RADIATION PROTECTION, (2011), vol. 26 br. 1, str. 18-24 |
Projekat | Ministry of Science and Technological Development of Republic of Serbia |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors (Article) |
Autori | Davidovic Vojkan S Stojadinovic Ninoslav D Dankovic Danijel M Golubovic Snezana M Manic Ivica Dj Djoric-Veljkovic Snezana M Dimitrijev Sima |
Info | JAPANESE JOURNAL OF APPLIED PHYSICS, (2008), vol. 47 br. 8, str. 6272-6276 |
Projekat | Ministry of Science of the Republic of Serbia |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs (Article) |
Autori | Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Stojadinovic Ninoslav D |
Info | IET CIRCUITS DEVICES & SYSTEMS, (2008), vol. 2 br. 2, str. 213-221 |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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